ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,818, issued on March 4, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of manufacturing the same" was invented by Jin Ha Kim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the same, includes interlayer insulation layers spaced apart from each other and stacked, gate lines formed between the interlayer insulation layers, and a plug vertically passing through the interlayer insulation layers and the gate lines. Each of the gate lines includes a barrier layer formed along an inner wall of the interlayer insulation layer and the plug, a first conduc...