US Patent Issued to SK hynix on March 25 for "Semiconductor device including internal transmission path and stacked semiconductor device using the same" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,929, issued on March 25, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including internal transmission path and stacked semiconductor device using the same" was invented by Jinhyung Lee (Gyeonggi-do, South Korea), Myeong Jae Park (Gyeonggi-do, South Korea), Su Hyun Oh (Gyeonggi-do, South Korea) and Chang Kwon Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprising: a first or a second path configured to transmit a first signal which swings between a ground level and a first level, a third path configured to transmit a second signal which swings between the grou...