US Patent Issued to SK hynix on March 25 for "Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,219, issued on March 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the same" was invented by Won Tae Koo (Icheon-si, South Korea) and Jae Gil Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a ferroelectric layer disposed on the substrate, a gate insulation layer disposed on the ferroelectric layer, metal particles disposed in the gate insulation layer, and a gate electrode layer disposed on the gate insulation layer."

The patent was filed on ...