US Patent Issued to SK Hynix on March 25 for "Memory system determining a degraded word line based on fail bit count and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,259,778, issued on March 25, was assigned to SK Hynix Inc. (Icheon, South Korea).

"Memory system determining a degraded word line based on fail bit count and operating method thereof" was invented by Gi Bbeum Han (Icheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system and an operating method thereof perform word line verification by deactivating each of a plurality of word lines at the same time as initiating a bit line equalization, determine a fail bit count for each word line according to a number of bit flips that occurred during the word line verification, and determine a degraded word line on the basis of the fail bit ...