US Patent Issued to SK hynix on March 25 for "Manufacturing method of semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,521, issued on March 25, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Manufacturing method of semiconductor memory device" was invented by Nam Jae Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a first etch stop layer; a source layer on the first etch stop layer; a second etch stop layer on the source layer; a stack structure on the second etch stop layer; and a channel structure penetrating the first and second etch stop layers, the source layer, and the stack structure, the channel ...