US Patent Issued to SK hynix on March 18 for "Semiconductor memory device and method of manufacturing the semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,132, issued on March 18, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method of manufacturing the semiconductor memory device" was invented by Jung Shik Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first conductive pattern, a second conductive pattern configured to overlap a first line component of the first conductive pattern and to leave exposed a first pad component of the first conductive pattern. The semiconductor memory device also includes an interlayer insulating layer between the first conductive pattern and the second conduc...