US Patent Issued to SK hynix on March 11 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,548, issued on March 11, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Sang Young Lee (Seoul, South Korea), Kyung Woong Park (Gyeonggi-do, South Korea) and Han Joon Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a dielectric layer, a conductive layer formed over the dielectric layer, and a reduction sacrificial layer formed between the dielectric layer and the conductive layer, wherein the reduction sacrificial layer includes a first reduction sacrificial material having higher electronegativity than t...