US Patent Issued to SK hynix on June 3 for "Semiconductor memory device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,160, issued on June 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method thereof" was invented by Jae Taek Kim (Icheon-si, South Korea) and Hye Yeong Jung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device, and a manufacturing method of the semiconductor memory device, includes a peripheral transistor, a first insulating layer covering the peripheral transistor, a source layer on the first insulating layer, and a stack structure on the source layer. The semiconductor memory device also includes a peripheral contact structure penetrating the s...