US Patent Issued to SK hynix on June 3 for "Semiconductor device with buried gate word line drivers" (South Korean Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,475, issued on June 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device with buried gate word line drivers" was invented by Dong Hyun Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate; and a plurality of sub-word line drivers, each of the sub-word line drivers including a plurality of transistors, wherein at least one of the plurality of transistors has a buried gate structure positioned in the substrate."

The patent was filed on June 20, 2022, under Application No. 17/844,552.

*For further information, including images, charts and tables, please v...