US Patent Issued to SK hynix on June 3 for "Semiconductor device including write transistor and read transistor having read word line and read bit line at opposite ends of read channel layer" (South Korean Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,142, issued on June 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including write transistor and read transistor having read word line and read bit line at opposite ends of read channel layer" was invented by Mir Im (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory cell including a write transistor and a read transistor that are electrically connected to each other. The write transistor includes a write bit line disposed over a substrate, a write channel structure disposed on the write bit line and extending in a direction perpendicular to a surface of th...