US Patent Issued to SK hynix on June 3 for "Memory device and operating method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,448, issued on June 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Hee Youl Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a memory device and an operating method of the memory device. The memory device includes: a first select transistor, a plurality of memory cells, and a second select transistor, connected between a source line and a bit line; and a peripheral circuit for performing a pre-program operation on the plurality of memory cells and then performing an erase operation on the plurality of memory cells. In the...