ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,458, issued on June 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by June Young Choi (Icheon-si, South Korea) and Un Sang Lee (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory block including memory cells to which a program voltage is applied through a word line. The memory device also includes a peripheral circuit configured to perform a verify operation of comparing threshold voltages of the memory cells with a verify voltage on each of a plurality of program levels. The memory device further includes a control logic cir...