ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,545, issued on June 24, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Switching element" was invented by Dong Uk Lee (Icheon-si, South Korea) and Hae Chang Yang (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A switching element comprising: a first gate dielectric layer formed over a substrate; a second gate dielectric layer formed over the first gate dielectric layer to overlap a part of the first gate dielectric layer, and including a ferroelectric material; a second gate electrode formed over the second gate dielectric layer; and a first gate electrode located between the first and second gate dielectric layers, ...