US Patent Issued to SK hynix on June 24 for "Memory device and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,848, issued on June 24, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and operating method thereof" was invented by Cheol Joong Park (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a target memory block and a peripheral circuit configured to float local word lines which are coupled to the target memory block while an erase voltage rises toward a target level, apply a first voltage to the local word lines after the erase voltage reaches the target level, and apply one or more group voltages to the local word lines after applying the first voltage."

The patent was filed on A...