US Patent Issued to SK hynix on June 17 for "Memory device and operating method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,333,153, issued on June 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Sung Yong Lim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a memory device and an operating method of the memory device. The memory device includes: a memory block including first select transistors, memory cells, and second select transistors, which are connected between bit lines and a source line; a precharge controller for monitoring a program operation of the memory cells, and changing a precharge mode of unselected strings among strings included in...