ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,161, issued on June 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by Jong Hoon Lee (Icheon-si, South Korea) and Se Chun Park (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of memory cells, a peripheral circuit configured to perform a verify operation that identifies threshold voltages of the plurality of memory cells by using a first verify voltage and a second verify voltage, and a program operation controller configured to control the...