ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,156, issued on June 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the memory device" was invented by Jae Hyeon Shin (Icheon-si, South Korea), Chang Han Son (Icheon-si, South Korea), In Gon Yang (Icheon-si, South Korea) and Sung Hyun Hwang (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to an electronic device. A memory device including a plurality of memory cells connected to a plurality of word lines arranged between a plurality of source select lines and a plurality of drain select lines, a peripheral circuit configured to perform a program o...