US Patent Issued to SK hynix on June 10 for "Vertical semiconductor device and method for fabricating the vertical semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,877, issued on June 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Vertical semiconductor device and method for fabricating the vertical semiconductor device" was invented by In-Su Park (Icheon-si, South Korea), Jong-Gi Kim (Yongin-si, South Korea), Hai-Won Kim (Icheon-si, South Korea) and Hoe-Min Jeong (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and incl...