US Patent Issued to SK hynix on June 10 for "Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,047, issued on June 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the same" was invented by Woo Cheol Lee (Icheon-si, South Korea) and Won Tae Koo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment of the present disclosure includes a first electrode, a first resistance change layer disposed on the first electrode, a conduction control layer disposed on the first resistance change layer, a second resistance change layer dispose...