US Patent Issued to SK hynix on June 10 for "Memory device and operating method of the memory device" (South Korean Inventor)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,593, issued on June 10, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method of the memory device" was invented by Nam Cheol Jeon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to a memory device, and an operating method of the memory device. The memory device includes a first memory block and a second memory block each including a plurality of memory cells. The memory device also includes a voltage generator for applying operating voltages to first global lines, selectively applying a positive voltage to global select lines included in second...