US Patent Issued to SK hynix on July 8 for "Three-dimensional NAND semiconductor memory device with intervening plug and method of manufacturing the semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,606, issued on July 8, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Three-dimensional NAND semiconductor memory device with intervening plug and method of manufacturing the semiconductor memory device" was invented by Won Geun Choi (Icheon-si, South Korea), Jang Won Kim (Icheon-si, South Korea) and Jung Shik Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology includes a semiconductor memory device and a method of manufacturing the semiconductor memory device. The semiconductor memory device includes a first stack structure over a lower structure in which a cell region and a slimming region ar...