US Patent Issued to SK hynix on July 29 for "Semiconductor memory device and manufacturing method of the semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,301, issued on July 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method of the semiconductor memory device" was invented by Nam Kuk Kim (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a gate stack structure including alternately stacked interlayer insulating layers and conductive layers, a core pillar penetrating the gate stack structure, a channel layer disposed between the core pillar and the gate stack structure, a memory layer disposed between the channel layer and the gate stack structure, and a doped semicondu...