US Patent Issued to SK hynix on July 29 for "Semiconductor device including pass transistors" (South Korean Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,306, issued on July 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including pass transistors" was invented by Sang Hyun Sung (Icheon-si, South Korea) and Sung Lae Oh (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack including a plurality of electrode layers and a plurality of interlayer dielectric layers that are alternately stacked in a vertical direction on a substrate; and a plurality of vertical pass transistors disposed over the stack, and each of the plurality of vertical pass transistors coupled to a corresponding electrode layer, wherein the plur...