US Patent Issued to SK HYNIX on July 29 for "Semiconductor device and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,316, issued on July 29, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Jeong Hwan Song (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including at least one memory cell is provided. The memory cell includes: a first electrode layer; a second electrode layer; a selection element layer coupled between the first electrode layer and the second electrode layer; and an insulating layer coupled between the first electrode layer and the second electrode such that a side surface of the insulating layer is in contact with a side s...