ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,400, issued on July 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device controlling pass voltage and operating method thereof" was invented by Yeong Jo Mun (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a memory cell array including a cell string including a plurality of memory cells respectively connected between a common source line and a plurality of bit lines; a peripheral circuit for performing an internal operation on the memory cells; and control logic for controlling the peripheral circuit to apply a voltage necessary for the internal operation to word lines connected t...