US Patent Issued to SK hynix on July 29 for "Memory device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,305, issued on July 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and manufacturing method thereof" was invented by Sung Lae Oh (Icheon-si, South Korea), Sang Hyun Sung (Icheon-si, South Korea) and Hyun Soo Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers that are alternately stacked on a substrate; a trench in the electrode structure, and having an upper sidewall, a lower sidewall and a horizontal portion that couples the upper sidewall to the lower sidew...