US Patent Issued to SK HYNIX on July 29 for "Image sensing device including through silicon via (TSV) structure" (South Korean Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,411, issued on July 29, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Image sensing device including through silicon via (TSV) structure" was invented by Yun Hui Yang (Icheon-si, South Korea), Ji Suk Park (Icheon-si, South Korea) and Tae Yang Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensing device includes a first substrate including a first front surface and a first back surface, a first interlayer insulation layer disposed below the first front surface and including a first interconnect, a second substrate including a second front surface and a second back surface, a second interlayer insulatio...