ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,320, issued on July 22, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Vertical semiconductor device and method for fabricating the same" was invented by Wan Sup Shin (Gyeonggi-do, South Korea), Jong Gi Kim (Gyeonggi-do, South Korea), Seung Wook Ryu (Gyeonggi-do, South Korea), Jun Seok Oh (Gyeonggi-do, South Korea) and Heung Ju Lee (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial...