ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,071, issued on July 22, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Byung Ho Lee (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor layer, a gate insulating layer, and a gate electrode sequentially formed in a trench formed to a predetermined depth from a first surface of a first substrate; a third substrate bonded to a second surface opposite to the first surface of the first substrate; and an air gap interposed between the semiconductor layer and the first substrate and between the semicond...