ALEXANDRIA, Va., July 23 -- United States Patent no. 12,366,971, issued on July 22, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device and method of operating the same" was invented by Chan Hui Jeong (Icheon-si, South Korea), Dong Hun Kwak (Icheon-si, South Korea) and Se Chun Park (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes memory cells connected to a plurality of word lines. The memory device also includes a read operation performer configured to perform a read operation of applying an equalizing voltage to the plurality of word lines and applying a read voltage to a selected word line. The memory device further includes a fail cell cou...