US Patent Issued to SK hynix on July 22 for "Memory cell and semiconductor memory device with the same" (South Korean Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,306, issued on July 22, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory cell and semiconductor memory device with the same" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a highly integrated memory cell and a semiconductor memory device including the same. According to the present invention, a semiconductor memory device comprises: a memory cell array in which a plurality of memory cells is vertically stacked to a substrate, wherein each of the memory cells includes: a bit line vertically oriented to the substrate; a capacitor laterally spaced a...