US Patent Issued to SK hynix on July 15 for "Vertical semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,902, issued on July 15, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Vertical semiconductor device and method for fabricating the same" was invented by Hye-Hyeon Byeon (Icheon-si Gyeonggi-do, South Korea), Sang-Deok Kim (Seongnam-si Gyeonggi-do, South Korea), Il-Young Kwon (Seoul, South Korea), Tae-Hong Gwon (Icheon-si Gyeonggi-do, South Korea) and Jin-Ho Bin (Hanam-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by ...