US Patent Issued to SK hynix on July 1 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,331, issued on July 1, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea), Kyung Hoon Min (Gyeonggi-do, South Korea) and Ilsup Jin (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes: forming an etch stopper pad including a sacrificial plug over a substrate and a sacrificial pad over the sacrificial plug; forming an etch target layer over the etch stopper pad; forming a plurality of openings by etching the etch target layer and stopping the etching at ...