US Patent Issued to SK hynix on July 1 for "Memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,495, issued on July 1, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device" was invented by Hyun Seob Shin (Icheon-si, South Korea) and Dong Hun Kwak (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells, where each memory cell is configured to be in an erased state or one of a plurality of program states according to data stored therein. The memory device also includes a peripheral circuit configured to, in a program operation on the plurality of memory cells, perform a first program voltage application operation on first memory cells, the first memory cells bei...