US Patent Issued to SK hynix on July 1 for "Memory device, method of manufacturing memory device and method of operating memory device" (South Korean Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,349, issued on July 1, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device, method of manufacturing memory device and method of operating memory device" was invented by Moon Sik Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and methods of manufacturing and operating the memory device, include alternately stacked interlayer insulating layers and conductive layers, a vertical hole configured to pass through the alternately stacked conductive layers and interlayer insulating layers, first blocking layers formed along the interlayer insulating layers exposed through the vertical hole, and s...