US Patent Issued to SK hynix on Jan. 28 for "Semiconductor memory device and manufacturing method of the semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,319, issued on Jan. 28, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and manufacturing method of the semiconductor memory device" was invented by Nam Jae Lee (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a semiconductor memory device including: a substrate having a Complementary Metal Oxide Semiconductor (CMOS) circuit; a gate stack structure including interlayer insulating layers and conductive patterns, which are alternately stacked in a vertical direction on the substrate; a channel structure having a first part penetrating the gate stack structure and a second p...