US Patent Issued to SK hynix on Jan. 27 for "Semiconductor memory device including write driver with power gating structures and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,524, issued on Jan. 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor memory device including write driver with power gating structures and operating method thereof" was invented by Woongrae Kim (Gyeonggi-do, South Korea), Yoo-Jong Lee (Gyeonggi-do, South Korea) and A-Ram Rim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first circuit having a first power gating structure, a second circuit, and a third circuit having a second power gating structure that is different from the first power gating structure, and suitable for isolating the second circuit from the firs...