US Patent Issued to SK hynix on Jan. 27 for "Semiconductor memory device having first net-shaped source pattern, second source pattern and pad pattern therebetween" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,486, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device having first net-shaped source pattern, second source pattern and pad pattern therebetween" was invented by Nam Jae Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There are provided a semiconductor memory device and a manufacturing method of the same. The semiconductor memory device includes: a peripheral circuit structure with a page buffer group; a net-shaped first source pattern disposed on the peripheral circuit structure, the net-shaped first source pattern with a plurality of openings; a memory cell array dis...