ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,487, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Semiconductor memory device" was invented by Yeon Seob Im (Icheon-si, South Korea), Eun Mee Kwon (Icheon-si, South Korea), Nam Kuk Kim (Icheon-si, South Korea) and Keon Soo Shim (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first channel structure which is adjacent to an insulating structure and penetrates a plurality of conductive layers, a second channel structure which is spaced apart from the insulating structure and penetrates the plurality of conductive layers, a first impurity region included in an...