ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,474, issued on Jan. 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Hye Won Yoon (Gyeonggi-do, South Korea), Seung Hwan Kim (Gyeonggi-do, South Korea) and Kang Sik Choi (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including highly integrated memory cells and a method for fabricating the same. The semiconductor device may include: a vertical conductive line; a horizontal layer horizontally oriented from the vertical conductive line and including a first horizontal portion and a second horizontal portion thinner t...