US Patent Issued to SK HYNIX on Jan. 27 for "Semiconductor device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,718, issued on Jan. 27, was assigned to SK HYNIX INC. (Icheon-si, South Korea).

"Semiconductor device and method for fabricating the same" was invented by Cha Deok Dong (Icheon-si, South Korea) and Keo Rock Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods for fabricating semiconductor devices are disclosed. In some implementations, a semiconductor device may include a first electrode layer; a second electrode layer disposed over the first electrode layer and spaced apart from the first electrode layer; and a selector layer disposed between the first electrode layer and the second electrode...