US Patent Issued to SK hynix on Jan. 27 for "Semiconductor device and memory device including complementary delay circuits for maximizing operation efficiency while minimizing area occupied by delay circuits" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,044, issued on Jan. 27, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device and memory device including complementary delay circuits for maximizing operation efficiency while minimizing area occupied by delay circuits" was invented by Jae Kwon (Gyeonggi-do, South Korea), Chae Hyoun Park (Gyeonggi-do, South Korea) and Yun Jin Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first delay circuit having a first delay amount that decreases according to a common bias, and configured to generate a first delay control signal based on the first delay amount; a second de...