US Patent Issued to SK hynix on Jan. 27 for "Memory device with multi channel structures and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,488, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device with multi channel structures and method of manufacturing the same" was invented by Won Geun Choi (Icheon-si, South Korea), Mi Seong Park (Icheon-si, South Korea), In Su Park (Icheon-si, South Korea), Jung Shik Jang (Icheon-si, South Korea) and Jung Dal Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the same, includes a stacked structure including gate lines stacked to be spaced apart from each other. The memory device also includes a first channel structure vertical to the gate li...