US Patent Issued to SK hynix on Jan. 27 for "Memory device and method of manufacturing memory device" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,493, issued on Jan. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing memory device" was invented by Sung Yong Chung (Icheon-si, South Korea) and Nam Kuk Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present discloses includes a memory device including a first vertical plug and a second vertical plug that are arranged to be adjacent to each other, a first select line contacting the first vertical plug, a second select line over a same layer as the first select line and contacting the second vertical plug, and an isolation pattern overlapping with a portion of the f...