ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,672, issued on Jan. 20, was assigned to SK HYNIX INC. (Icheon-si, South Korea).
"Semiconductor device including shield layer" was invented by Jong Min Yun (Icheon-si, South Korea), Soo Gil Kim (Icheon-si, South Korea) and Soo Man Seo (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include: a first conductive line; a second conductive line disposed over the first conductive line and spaced apart from the first conductive line; a memory cell disposed between the first conductive line and the second conductive line and including a memory layer; and one or more shield layers disposed at least one of at a...