US Patent Issued to SK hynix on Jan. 20 for "Semiconductor device including oxide semiconductor and method for fabricating the same" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,512, issued on Jan. 20, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor device including oxide semiconductor and method for fabricating the same" was invented by Jun Hwe Cha (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern for...