ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,754, issued on Jan. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Semiconductor device having wafer-to-wafer bonding structure and manufacturing method thereof" was invented by Sung Lae Oh (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device comprises: forming isolation layers in a front surface of an upper wafer substrate; forming a through hole that exposes one of the isolation layers, through the upper wafer substrate from a back surface of the upper wafer substrate; forming a first dielectric layer that fills the through hole; defining a lower wafer including a lo...