US Patent Issued to SK hynix on Jan. 20 for "Method of manufacturing a semiconductor chip including a stress concentration portion" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,783, issued on Jan. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Method of manufacturing a semiconductor chip including a stress concentration portion" was invented by Woo Sung Moon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor chip includes forming a first stack by alternately stacking first material layers and second material layers over a semiconductor substrate, forming a first trench penetrating the first stack, and forming a first stress concentration portion by forming a second stack over the first stack."

The patent was filed on Nov. 1, 2022, under Applicatio...