US Patent Issued to SK hynix on Jan. 20 for "Memory device and program speed control method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,530,133, issued on Jan. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and program speed control method thereof" was invented by Hyun Seob Shin (Icheon-si, South Korea) and Dong Hun Kwak (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a memory cell array including a first memory cell group including memory cells located within a first physical distance from a reference node and a second memory cell group including memory cells located beyond the first physical distance from the reference node; a peripheral circuit configured to perform a program operation of applying program vo...