US Patent Issued to SK hynix on Jan. 13 for "Semiconductor memory device and method of manufacturing the semiconductor memory device" (South Korean Inventor)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,998, issued on Jan. 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device and method of manufacturing the semiconductor memory device" was invented by Nam Jae Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a gate stack including interlayer insulating layers and word lines alternately stacked in a first direction, channel pillars passing through the gate stack and tapering toward the first direction, source select lines surrounding the channel pillars and extending to overlap the gate st...